KSR1112 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

KSR1112 Specs and Replacement

Type Designator: KSR1112

SMD Transistor Code: R12

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 47 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3.7 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

KSR1112 Substitution

- BJT ⓘ Cross-Reference Search

KSR1112 datasheet

..1. Size:34K samsung

ksr1112.pdf pdf_icon

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8.1. Size:46K fairchild semi

ksr1114.pdf pdf_icon

KSR1114 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1 =4.7K , R2=47K ) Complement to KSR2114 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R14 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted ... See More ⇒

8.2. Size:36K fairchild semi

ksr1110.pdf pdf_icon

KSR1110 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K ) Complement to KSR2110 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R10 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter V... See More ⇒

8.3. Size:43K fairchild semi

ksr1111.pdf pdf_icon

KSR1111 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=22K ) Complement to KSR2111 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R11 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter ... See More ⇒