KSR2109 Datasheet, Equivalent, Cross Reference Search

   Type Designator: KSR2109
   SMD Transistor Code: R59
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 5.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23

KSR2109 Transistor Equivalent Substitute - Cross-Reference Search

KSR2109 Datasheet (PDF)

..1. Size:49K fairchild semi
ksr2109.pdf

KSR2109Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R=4.7K) Complement to KSR11092SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingRR59 BPNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter

8.1. Size:52K fairchild semi
ksr2101.pdf

KSR2101Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1 =4.7K, R2=4.7K) Complement to KSR11012SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR51R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

8.2. Size:53K fairchild semi
ksr2107.pdf

KSR2107Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=47K) Complement to KSR11072SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR57R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

8.3. Size:52K fairchild semi
ksr2104.pdf

KSR2104Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=47K, R2=47K) Complement to KSR11042SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR54R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

8.4. Size:53K fairchild semi
ksr2103.pdf

KSR2103Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=22K, R2=22K) Complement to KSR11032SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR53R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

8.5. Size:53K fairchild semi
ksr2105.pdf

KSR2105Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit3 Built in bias Resistor (R1=4.7K, R2=10K) Complement to KSR11052SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1BR55R2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted

8.6. Size:41K fairchild semi
ksr2102.pdf

KSR2102Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K, R2=10K) Complement to KSR11022SOT-2311. Base 2. Emitter 3. CollectorEquivalent CircuitCMarkingR1R52 BR2PNP Epitaxial Silicon TransistorEAbsolute Maximum Ratings Ta=25C unless otherwise noted Sy

8.7. Size:68K samsung
ksr2108.pdf