KST06 Specs and Replacement
Type Designator: KST06
SMD Transistor Code: 1G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SOT23
KST06 Substitution
- BJT ⓘ Cross-Reference Search
KST06 datasheet
KST05/06 Driver Transistor Collector-Emitter Voltage VCEO = KST05 60V 3 KST06 80V Collector Power Dissipation PC (max) = 350mW Complement to KST55/56 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collecto-Base Voltage KST05 60 V KST06 ... See More ⇒
SKST065N08N, SKSS063N08N ( ) SkyMOS1 N-MOSFET 85V, 5.6m , 105A Features Product Summary Uses CRM(CQ) advanced SkyMOS1 technology Wafer Code WCB Extremely low on-resistance RDS(on) VDS 85V Excellent QgxRDS(on) product(FOM) RDS(on) 5.6m ID Qualified according to JEDEC criteria 105A Applications Motor control and drive 100% Avala... See More ⇒
Detailed specifications: KSR2108, KSR2109, KSR2110, KSR2111, KSR2112, KSR2113, KSR2114, KST05, BC549, KST10, KST1009F1, KST1009F2, KST1009F3, KST1009F4, KST1009F5, KST13, KST14
Keywords - KST06 pdf specs
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History: 2SA773-1 | KT209L | BF188
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