KST1009F1 Datasheet, Equivalent, Cross Reference Search
Type Designator: KST1009F1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO236
KST1009F1 Transistor Equivalent Substitute - Cross-Reference Search
KST1009F1 Datasheet (PDF)
kst10.pdf
KST10VHF/UHF Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 3 VPC Collector Power Dissipation 350 mWTSTG Storage Temperature 150 CRTH(j-a) Thermal Resis
kst10.pdf
KST10TRANSISTOR (NPN) SOT23 FEATURES VHF/UHF Transistor MARKING:3E1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 30 V CBO3. COLLECTOR V Collector-Emitter Voltage 25 V CEOV Emitter-Base Voltage 3 V EBOI Collector Current 40 mA CPC Collector Power Dissipation 350 mW R Therma
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
