All Transistors. KST4126 Datasheet

 

KST4126 Datasheet and Replacement


   Type Designator: KST4126
   SMD Transistor Code: C3
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO236
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KST4126 Datasheet (PDF)

 ..1. Size:44K  fairchild semi
 kst4126.pdf pdf_icon

KST4126

KST4126General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -25 VVCEO Collector-Emitter Voltage -25 VVEBO Emitter-Base Voltage -4 VIC Collector Current -200 mAPC Collector Power Dissipation 350 mWTSTG Storage

 8.1. Size:44K  fairchild semi
 kst4123.pdf pdf_icon

KST4126

KST4123General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current 200 mAPC Collector Power Dissipation 350 mWTSTG Storage Temp

 8.2. Size:44K  fairchild semi
 kst4124.pdf pdf_icon

KST4126

KST4124General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current 200 mAPC Collector Power Dissipation 350 mWTSTG Storage Temp

 8.3. Size:45K  fairchild semi
 kst4125.pdf pdf_icon

KST4126

KST4125General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 VVCEO Collector-Emitter Voltage -30 VVEBO Emitter-Base Voltage -4 VIC Collector Current -200 mAPC Collector Power Dissipation 350 mWTSTG Storage

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Keywords - KST4126 transistor datasheet

 KST4126 cross reference
 KST4126 equivalent finder
 KST4126 lookup
 KST4126 substitution
 KST4126 replacement

 

 
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