KST55 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

KST55 Specs and Replacement

Type Designator: KST55

SMD Transistor Code: 2H

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO236

KST55 Substitution

- BJT ⓘ Cross-Reference Search

KST55 datasheet

..1. Size:44K fairchild semi

kst55 kst56.pdf pdf_icon

KST55/56 Driver Transistor Collector-Emitter Voltage VCEO = KST55 - 60V 3 KST56 - 80V Collector Power Dissipation PC (max) = 350mW Complement to KST05/06 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector Base Voltage KST55 -60 V K... See More ⇒

..2. Size:21K samsung

kst55.pdf pdf_icon

KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Base Voltage VCBO KST55 -60 V KST56 -80 V Collector-Emitter Voltage VCEO KST55 -60 V KST56 -80 V Emitter-Base Voltage VEBO -4 V Collector Current IC -500 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 Therma... See More ⇒

0.1. Size:44K fairchild semi

kst5551.pdf pdf_icon

KST5551 Amplifier Transistor Collector-Emitter Voltage VCEO=160V 3 Collector Power Dissipation PC (max)=350mW 2 SOT-23 1 Mark G1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base ... See More ⇒

0.2. Size:56K fairchild semi

kst5550.pdf pdf_icon

KST5550 High Voltage Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 350 mW TSTG Storage Tempe... See More ⇒

Detailed specifications: KST43, KST4401, KST4403, KST5086, KST5087, KST5088, KST5089, KST5179, 2N5401, KST5550, KST56, KST63, KST64, KST6428, KST812M3, KST812M4, KST812M5