All Transistors. KST55 Datasheet

 

KST55 Datasheet and Replacement


   Type Designator: KST55
   SMD Transistor Code: 2H
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO236
      - BJT Cross-Reference Search

   

KST55 Datasheet (PDF)

 ..1. Size:44K  fairchild semi
kst55 kst56.pdf pdf_icon

KST55

KST55/56Driver Transistor Collector-Emitter Voltage: VCEO = KST55: - 60V3KST56: - 80V Collector Power Dissipation: PC (max) = 350mW Complement to KST05/06 2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector Base Voltage : KST55 -60 V: K

 ..2. Size:21K  samsung
kst55.pdf pdf_icon

KST55

KST55/56 PNP EPITAXIAL SILICON TRANSISTORDRIVER TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Base Voltage VCBO :KST55 -60 V :KST56 -80 VCollector-Emitter Voltage VCEO :KST55 -60 V :KST56 -80 VEmitter-Base Voltage VEBO -4 VCollector Current IC -500 mACollector Dissipation PC 350 mWStorage Temperature TSTG 150 Therma

 0.1. Size:44K  fairchild semi
kst5551.pdf pdf_icon

KST55

KST5551Amplifier Transistor Collector-Emitter Voltage: VCEO=160V 3 Collector Power Dissipation: PC (max)=350mW2SOT-231Mark: G11. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 VVCEO Collector-Emitter Voltage 160 VVEBO Emitter-Base

 0.2. Size:56K  fairchild semi
kst5550.pdf pdf_icon

KST55

KST5550High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 160 VVCEO Collector-Emitter Voltage 140 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Power Dissipation 350 mWTSTG Storage Tempe

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: NTE2547 | 2N2274 | BCY57 | SD457 | 2SC1758 | RN1909 | BC856C

Keywords - KST55 transistor datasheet

 KST55 cross reference
 KST55 equivalent finder
 KST55 lookup
 KST55 substitution
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