KST56 Specs and Replacement
Type Designator: KST56
SMD Transistor Code: 2G
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO236
KST56 Substitution
- BJT ⓘ Cross-Reference Search
KST56 datasheet
KST55/56 Driver Transistor Collector-Emitter Voltage VCEO = KST55 - 60V 3 KST56 - 80V Collector Power Dissipation PC (max) = 350mW Complement to KST05/06 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector Base Voltage KST55 -60 V K... See More ⇒
Detailed specifications: KST4403, KST5086, KST5087, KST5088, KST5089, KST5179, KST55, KST5550, BC548, KST63, KST64, KST6428, KST812M3, KST812M4, KST812M5, KST812M6, KST812M7
Keywords - KST56 pdf specs
KST56 cross reference
KST56 equivalent finder
KST56 pdf lookup
KST56 substitution
KST56 replacement
History: CTP1104
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