KST812M8 Specs and Replacement
Type Designator: KST812M8
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 400
Package: TO236
KST812M8 Substitution
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KST812M8 datasheet
KST812M7 S/S TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. (C) 1994 Samsung Electronics Printed in Korea. Page 1 (KST812M7) ... See More ⇒
Detailed specifications: KST63, KST64, KST6428, KST812M3, KST812M4, KST812M5, KST812M6, KST812M7, BD140, KST92, KST93, KSY34, KSY62, KSY62A, KSY62B, KSY63, KSY71
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