KST93 Specs and Replacement
Type Designator: KST93
SMD Transistor Code: 2E
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO236
KST93 Substitution
- BJT ⓘ Cross-Reference Search
KST93 datasheet
September 2009 KST92/KST93 PNP Epitaxial Silicon Transistor Features High Voltage Transistor High Current, Wide SOA 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector Base Voltage KST92 -300 V KST93 -200 V VCEO Collector-Emitter Voltage KST92 -300 V KST93 -200 V ... See More ⇒
Detailed specifications: KST6428, KST812M3, KST812M4, KST812M5, KST812M6, KST812M7, KST812M8, KST92, D882, KSY34, KSY62, KSY62A, KSY62B, KSY63, KSY71, KSY72, KSY81
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