KT214B9 Datasheet. Specs and Replacement
Type Designator: KT214B9 📄📄
SMD Transistor Code: КТ214Б9
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 30 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
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KT214B9 datasheet
Detailed specifications: KT209K, KT209L, KT209M, KT209V, KT210A, KT210B, KT210V, KT214A9, 2N2907, KT214D9, KT214E9, KT214G9, KT214V9, KT215A9, KT215B9, KT215D9, KT215E9
Keywords - KT214B9 pdf specs
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BJT Parameters and How They Relate
History: BFW66 | 2N3834 | 2N6379 | KT630E | GD207 | 2SA1980E | BC308C
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