KT306DM PDF and Equivalents Search

KT306DM Specs and Replacement

Type Designator: KT306DM

SMD Transistor Code: КТ306ДМ

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO92

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KT306DM datasheet

Detailed specifications: KT302B, KT302G, KT302V, KT306A, KT306AM, KT306B, KT306BM, KT306D, TIP3055, KT306G, KT306GM, KT306V, KT306VM, KT3101A-2, KT3101AM, KT3102A, KT3102AM

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