All Transistors. KT306DM Datasheet

 

KT306DM Datasheet and Replacement


   Type Designator: KT306DM
   SMD Transistor Code: КТ306ДМ
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
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KT306DM Datasheet (PDF)

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 kt306a-b-v-g-d 2t306a-b-v-g-d.pdf pdf_icon

KT306DM

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: DMJT9435 | 2N249 | 2N5031 | 2SC3298A | 2SA982 | 2SA416 | 2N639B

Keywords - KT306DM transistor datasheet

 KT306DM cross reference
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