2N4030 Datasheet and Replacement
Type Designator: 2N4030
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 180 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO18
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2N4030 Datasheet (PDF)
2n4030 1 2 3.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR TRANSISTORS 2N4030, 2N40312N4032, 2N4033TO-39Metal Can Package2N4030 And 2N4033 ARE PNP SMALL SIGNAL GENERAL PURPOSE AMLIFIER, TRANSISTORS.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N4030,32 2N4031, 33 UNITSVCEOCollector Emitter
2n4036-37 2n4036 2n4037.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4036/DGeneral Purpose TransistorsPNP Silicon2N4036COLLECTOR2N403732BASE1EMITTERMAXIMUM RATINGSRating Symbol 2N4036 2N4037 UnitCollectorEmitter Voltage VCEO 65 40 Vdc 321CollectorBase Voltage VCBO 90 60 VdcCASE 7904, STYLE 1EmitterBase Voltage VEBO 7.0 7.0 VdcTO
2n4031 2n4033.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N4031; 2N4033PNP medium power transistors1997 May 22Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP medium power transistors 2N4031; 2N4033FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max.
Datasheet: 2N4023 , 2N4024 , 2N4025 , 2N4026 , 2N4027 , 2N4028 , 2N4029 , 2N403 , D882P , 2N4031 , 2N4032 , 2N4033 , 2N4033CSM4 , 2N4034 , 2N4035 , 2N4036 , 2N4037 .
History: KT8107D2 | BFX57III | BC54PA | UN9217R | 2N1056 | 2SC999A | ECG2306
Keywords - 2N4030 transistor datasheet
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History: KT8107D2 | BFX57III | BC54PA | UN9217R | 2N1056 | 2SC999A | ECG2306



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