KT501D Specs and Replacement
Type Designator: KT501D
SMD Transistor Code: КТ501Д
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
KT501D Substitution
- BJT ⓘ Cross-Reference Search
KT501D datasheet
Detailed specifications: KT391A-2, KT391B-2, KT391V-2, KT396A-9, KT399A, KT399AM, KT501A, KT501B, 2SB817, KT501E, KT501G, KT501I, KT501J, KT501K, KT501L, KT501M, KT501V
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