KT502D Specs and Replacement
Type Designator: KT502D
SMD Transistor Code: КТ502Д
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
KT502D Substitution
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KT502D datasheet
Detailed specifications: KT501I, KT501J, KT501K, KT501L, KT501M, KT501V, KT502A, KT502B, 2SD669A, KT502E, KT502G, KT502V, KT503A, KT503B, KT503D, KT503E, KT503G
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