All Transistors. KT635A Datasheet

 

KT635A Datasheet, Equivalent, Cross Reference Search

Type Designator: KT635A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 15 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

KT635A Transistor Equivalent Substitute - Cross-Reference Search

 

KT635A Datasheet (PDF)

5.1. kt635b 2t635a.pdf Size:646K _russia

KT635A

5.2. kt635.pdf Size:253K _integral

KT635A
KT635A

КТ635Б кремниевый биполярный эпитаксиально-планарный n-p-n транзистор Назначение Импульсный переключательный высокочастотный n-p-n транзистор. Предназначен для использования в аппаратуре систем связи и другой рад

Datasheet: KT630G , KT630V , KT632B , KT632B-1 , KT633A , KT633B , KT634A-2 , KT634B-2 , BD140 , KT635B , KT637A-2 , KT637B-2 , KT638A , KT639A , KT639A1 , KT639B , KT639B1 .

 


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