KT637B-2 Datasheet. Specs and Replacement
Type Designator: KT637B-2 📄📄
SMD Transistor Code: КТ637Б-2
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 800 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
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KT637B-2 datasheet
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Detailed specifications: KT632B-1, KT633A, KT633B, KT634A-2, KT634B-2, KT635A, KT635B, KT637A-2, 13007, KT638A, KT639A, KT639A1, KT639B, KT639B1, KT639D, KT639D1, KT639E
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BJT Parameters and How They Relate
History: DTA114WE | HA7515 | KT668B | NTE2558 | NTE2547 | KRX214U | 2N637B
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