KT639-E1 Datasheet. Specs and Replacement

Type Designator: KT639-E1  📄📄 

SMD Transistor Code: КТ639-Е1

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

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KT639-E1 datasheet

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Detailed specifications: KT638A, KT639A, KT639A1, KT639B, KT639B1, KT639D, KT639D1, KT639E, TIP31C, KT639G, KT639G1, KT639I, KT639-I1, KT639J, KT639J1, KT639V, KT639V1

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