KT657A-2 Datasheet PDF and Equivalents Search

Type Designator: KT657A-2  📄📄 

SMD Transistor Code: КТ657А-2

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.375 W

Maximum Collector-Base Voltage |Vcb|: 12 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.06 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3000 MHz

Collector Capacitance (Cc): 1 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -