KT657B-2 Datasheet and Replacement

   Type Designator: KT657B-2
   SMD Transistor Code: КТ657Б-2
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.375 W
   Maximum Collector-Base Voltage |Vcb|: 12 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.06 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 3000 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
     - BJT ⓘ Cross-Reference Search