KT657B-2 Datasheet. Specs and Replacement
Type Designator: KT657B-2 📄📄
SMD Transistor Code: КТ657Б-2
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.375 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.06 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3000 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
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KT657B-2 datasheet
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Detailed specifications: KT644V, KT645A, KT645B, KT646A, KT646B, KT647A-2, KT648A-2, KT657A-2, 2SD2499, KT657V-2, KT659A, KT660A, KT660B, KT661A, KT662A, KT664A9, KT664B9
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History: UNR921AJ | 2SC4735D | MRF857
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