KT667A9 Datasheet. Specs and Replacement

Type Designator: KT667A9  📄📄 

SMD Transistor Code: КТ667А9

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

  📄📄 Copy 

 KT667A9 Substitution

- BJT ⓘ Cross-Reference Search

 

KT667A9 datasheet

NO PDF data!

Detailed specifications: KT660B, KT661A, KT662A, KT664A9, KT664B9, KT665A9, KT665B9, KT666A9, D880, KT668A, KT668B, KT668V, KT671A-2, KT680A, KT681A, KT682A-2, KT682B-2

Keywords - KT667A9 pdf specs

 KT667A9 cross reference

 KT667A9 equivalent finder

 KT667A9 pdf lookup

 KT667A9 substitution

 KT667A9 replacement