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KT807B Specs and Replacement


   Type Designator: KT807B
   SMD Transistor Code: КТ807Б
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
 

 KT807B Substitution

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KT807B detailed specifications

 9.1. Size:572K  russia
 kt807a-b-am-bm.pdf pdf_icon

KT807B

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Detailed specifications: KT803A , KT805A , KT805AM , KT805B , KT805BM , KT805VM , KT807A , KT807AM , 8050 , KT807BM , KT808A , KT808A3 , KT808AM , KT808B3 , KT808BM , KT808GM , KT808VM .

Keywords - KT807B transistor specs

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