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KT808B3 Specs and Replacement


   Type Designator: KT808B3
   SMD Transistor Code: КТ808Б3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 7.2 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
 

 KT808B3 Substitution

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KT808B3 detailed specifications

 9.1. Size:868K  russia
 kt808a 2t808a.pdf pdf_icon

KT808B3

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Detailed specifications: KT805VM , KT807A , KT807AM , KT807B , KT807BM , KT808A , KT808A3 , KT808AM , 2SD2499 , KT808BM , KT808GM , KT808VM , KT809A , KT8101A , KT8101B , KT8102A , KT8102B .

Keywords - KT808B3 transistor specs

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