KT808B3 Datasheet and Replacement

   Type Designator: KT808B3
   SMD Transistor Code: КТ808Б3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 7.2 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
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