KT808B3 Datasheet. Specs and Replacement
Type Designator: KT808B3 📄📄
SMD Transistor Code: КТ808Б3
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 7.2 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
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KT808B3 datasheet
Detailed specifications: KT805VM, KT807A, KT807AM, KT807B, KT807BM, KT808A, KT808A3, KT808AM, 2SD2499, KT808BM, KT808GM, KT808VM, KT809A, KT8101A, KT8101B, KT8102A, KT8102B
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BJT Parameters and How They Relate
History: KT8102A
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