KT808GM Datasheet. Specs and Replacement

Type Designator: KT808GM  📄📄 

SMD Transistor Code: КТ808ГМ

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 7.2 MHz

Collector Capacitance (Cc): 500 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

  📄📄 Copy 

 KT808GM Substitution

- BJT ⓘ Cross-Reference Search

 

KT808GM datasheet

 9.1. Size:868K  russia

kt808a 2t808a.pdf pdf_icon

KT808GM

... See More ⇒

Detailed specifications: KT807AM, KT807B, KT807BM, KT808A, KT808A3, KT808AM, KT808B3, KT808BM, SS8050, KT808VM, KT809A, KT8101A, KT8101B, KT8102A, KT8102B, KT8104A, KT8105A

Keywords - KT808GM pdf specs

 KT808GM cross reference

 KT808GM equivalent finder

 KT808GM pdf lookup

 KT808GM substitution

 KT808GM replacement