KT808GM Datasheet. Specs and Replacement
Type Designator: KT808GM 📄📄
SMD Transistor Code: КТ808ГМ
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 7.2 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
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KT808GM datasheet
Detailed specifications: KT807AM, KT807B, KT807BM, KT808A, KT808A3, KT808AM, KT808B3, KT808BM, SS8050, KT808VM, KT809A, KT8101A, KT8101B, KT8102A, KT8102B, KT8104A, KT8105A
Keywords - KT808GM pdf specs
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BJT Parameters and How They Relate
History: KT8102A | KT808B3
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