KT8107E2 Datasheet PDF and Equivalents Search

Type Designator: KT8107E2  📄📄 

SMD Transistor Code: КТ8107Е2

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 7 MHz

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -