KT8109A Datasheet, Equivalent, Cross Reference Search

   Type Designator: KT8109A
   SMD Transistor Code: КТ8109А
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 7 MHz
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -

KT8109A Transistor Equivalent Substitute - Cross-Reference Search