KT8116B Datasheet. Specs and Replacement
Type Designator: KT8116B 📄📄
SMD Transistor Code: КТ8116Б
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
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KT8116B datasheet
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Detailed specifications: KT8110V, KT8112A, KT8114A, KT8114B, KT8115A, KT8115B, KT8115V, KT8116A, D667, KT8116V, KT8117A, KT8117B, KT8118A, KT8120A, KT8121A, KT8121A-1, KT8121A-2
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History: KT8117B
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