All Transistors. 2N4099 Datasheet

 

2N4099 Datasheet and Replacement


   Type Designator: 2N4099
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 55 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 0.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO70
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2N4099 Datasheet (PDF)

 9.1. Size:129K  rca
 2n409.pdf pdf_icon

2N4099

 9.2. Size:42K  microsemi
 mx2n4091 mx2n4092 mx2n4093.pdf pdf_icon

2N4099

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET Equivalent To MIL-PRF-19500/431 DEVICES LEVELS 2N4091 MQ = JAN Equivalent 2N4092 MX = JANTX Equivalent 2N4093 MV = JANTXV EquivalentABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test C

 9.3. Size:50K  microsemi
 2n4091 2n4092 2n4093.pdf pdf_icon

2N4099

TECHNICAL DATA N-CHANNEL J-FET Qualified per MIL-PRF-19500/431 Devices Qualified Level JANTX 2N4091 2N4092 2N4093 JANTXV ABSOLUTE MAXIMUM RATINGS (T = +250C unless otherwise noted) A Parameters / Test Conditions Symbol Value Units Gate-Source Voltage V -40 V GSDrain-Source Voltage V 40 V DSDrain-Gate Voltage VDG 40 V Gate Current I 10 mAdc G(1)Power Dissipa

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N3811DCSM | 2SB1188SQ-R | BUL53B-SM | 3DF5 | 2SB927U | DTA144WET1G | 2SD2394

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