2N410 Datasheet and Replacement
Type Designator: 2N410
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.08 W
Maximum Collector-Base Voltage |Vcb|: 13 V
Maximum Collector Current |Ic max|: 0.015 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO1
2N410 Substitution
2N410 Datasheet (PDF)
2n4104.pdf

2N4104Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar NPN Device. VCEO = 60V 0.48 (0.019)0.41 (0.016)dia.IC = 0.05A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N4957 | 2N5958 | NTE302 | BSW39-10 | 2N6666 | IDB1016 | 2SB648AC
Keywords - 2N410 transistor datasheet
2N410 cross reference
2N410 equivalent finder
2N410 lookup
2N410 substitution
2N410 replacement
History: 2N4957 | 2N5958 | NTE302 | BSW39-10 | 2N6666 | IDB1016 | 2SB648AC



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