2N4100 Specs and Replacement
Type Designator: 2N4100
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 0.8 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Package: TO77
2N4100 Substitution
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2N4100 datasheet
2N4104 Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 60V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.05A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JA... See More ⇒
Detailed specifications: 2N4081 , 2N4086 , 2N4087 , 2N4087A , 2N409 , 2N4099 , 2N41 , 2N410 , 13009 , 2N4104 , 2N4105 , 2N4106 , 2N4106A , 2N411 , 2N4111 , 2N4112 , 2N4113 .
Keywords - 2N4100 pdf specs
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