KT8157B Datasheet and Replacement
Type Designator: KT8157B
SMD Transistor Code: КТ8157Б
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
- BJT Cross-Reference Search
KT8157B Datasheet (PDF)
kt815a.pdf

isc Silicon NPN Power Transistor KT815ADESCRIPTIONHigh Collector Current-I = 1.5ACHigh Collector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BDY17 | K2126 | BLX20 | 3DA30F | MJH16006 | CJF715 | BD612
Keywords - KT8157B transistor datasheet
KT8157B cross reference
KT8157B equivalent finder
KT8157B lookup
KT8157B substitution
KT8157B replacement
History: BDY17 | K2126 | BLX20 | 3DA30F | MJH16006 | CJF715 | BD612



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc984 replacement | a1046 transistor | hy19p03 | 2sk2749 | c2577 transistor | k3563 transistor | 2sc1775 datasheet | j377 transistor datasheet