KT815G Specs and Replacement

Type Designator: KT815G

SMD Transistor Code: КТ815Г

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

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KT815G datasheet

 9.1. Size:696K  russia

 kt815a-b-v-g.pdf pdf_icon

KT815G

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 9.2. Size:211K  inchange semiconductor

 kt815a.pdf pdf_icon

KT815G

isc Silicon NPN Power Transistor KT815A DESCRIPTION High Collector Current-I = 1.5A C High Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

Detailed specifications: KT8158A, KT8158B, KT8158V, KT8159A, KT8159B, KT8159V, KT815A, KT815B, TIP41C, KT815V, KT8164A, KT8164B, KT816A, KT816A-2, KT816B, KT816G, KT816V

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