KT8175B-1 PDF and Equivalents Search

KT8175B-1 Specs and Replacement

Type Designator: KT8175B-1

SMD Transistor Code: КТ8175Б-1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

- BJT ⓘ Cross-Reference Search

KT8175B-1 datasheet

Detailed specifications: KT816A-2, KT816B, KT816G, KT816V, 2SB647-D, KT8175A, KT8175A-1, KT8175B, S8050, KT8176A, KT8176B, KT8176V, KT8177A, KT8177B, KT8177V, KT817A, KT817B

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