KT8176V Specs and Replacement

Type Designator: KT8176V

SMD Transistor Code: КТ8176В

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

 KT8176V Substitution

- BJT ⓘ Cross-Reference Search

 

KT8176V datasheet

 9.1. Size:699K  russia

 kt817a-b-v-g.pdf pdf_icon

KT8176V

... See More ⇒

Detailed specifications: KT816V, 2SB647-D, KT8175A, KT8175A-1, KT8175B, KT8175B-1, KT8176A, KT8176B, A1015, KT8177A, KT8177B, KT8177V, KT817A, KT817B, KT817B2, KT817G, KT817G2

Keywords - KT8176V pdf specs

 KT8176V cross reference

 KT8176V equivalent finder

 KT8176V pdf lookup

 KT8176V substitution

 KT8176V replacement