KT817G2 Specs and Replacement

Type Designator: KT817G2

SMD Transistor Code: КТ817Г2

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

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KT817G2 datasheet

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KT817G2

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Detailed specifications: KT8176V, KT8177A, KT8177B, KT8177V, KT817A, KT817B, KT817B2, KT817G, 2N3906, KT817V, KT8181A, KT8181B, KT8182A, KT8182B, KT8183A, KT8183A-1, KT8183A-2

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