2N4112 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N4112
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 165 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 120 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO3
2N4112 Transistor Equivalent Substitute - Cross-Reference Search
2N4112 Datasheet (PDF)
2n4112.pdf
isc Silicon NPN Power Transistor 2N4112DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2n4117a pn4117a sst4117 2n4118a pn4118a sst4118 2n4119a pn4119a sst4119.pdf
2N/PN/SST4117A SeriesVishay SiliconixN-Channel JFETs2N4117A PN4117A SST41172N4118A PN4118A SST41182N4119A PN4119A SST4119PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)4117 -0.6 to -1.8 -40 70 304118 -1 to -3 -40 80 804119 -2 to -6 -40 100 200FEATURES BENEFITS APPLICATIONSD Ultra-Low Leakage: 0.2 pA D Insignificant Signal Loss/Error Vo
2n4114.pdf
2N4114Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac
2n4113.pdf
2N4113Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac
2n4117 2n4118 2n4119 pn4117 pn4118 pn4119 sst4117 sst4118 sst4119.pdf
N-Channel JFETGeneral Purpose AmplifierCORPORATION2N4117 2N4119 / 2N4117A 2N4119APN4117 PN4119 / PN4117A PN4119A / SST4117 SST4119FEATURESPIN CONFIGURATION Low Leakage Low CapacitanceABSOLUTE MAXIMUM RATINGSTO-92(T = 25oC unless otherwise noted)ATO-72Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40VGate Curre
2n4114.pdf
isc Silicon NPN Power Transistor 2N4114DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2n4113.pdf
isc Silicon NPN Power Transistor 2N4113DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2n4111.pdf
isc Silicon NPN Power Transistor 2N4111DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Datasheet: 2N410 , 2N4100 , 2N4104 , 2N4105 , 2N4106 , 2N4106A , 2N411 , 2N4111 , BC548 , 2N4113 , 2N4114 , 2N4115 , 2N4116 , 2N412 , 2N4121 , 2N4122 , 2N4123 .
