KT819GM Specs and Replacement

Type Designator: KT819GM

SMD Transistor Code: КТ819ГМ

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 90 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

 KT819GM Substitution

- BJT ⓘ Cross-Reference Search

 

KT819GM datasheet

 9.1. Size:1253K  russia

 kt819a-b-v-g-am-bm-vm-gm 2t819a-b-v.pdf pdf_icon

KT819GM

... See More ⇒

Detailed specifications: KT819A, KT819A-1, KT819AM, KT819B, KT819B-1, KT819BM, KT819G, KT819G-1, TIP42, KT819V, KT819V-1, KT819VM, KT825D, KT825E, KT825G, KT826A, KT826B

Keywords - KT819GM pdf specs

 KT819GM cross reference

 KT819GM equivalent finder

 KT819GM pdf lookup

 KT819GM substitution

 KT819GM replacement