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KT819V-1 Specs and Replacement


   Type Designator: KT819V-1
   SMD Transistor Code: КТ819В-1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -

 KT819V-1 Transistor Equivalent Substitute - Cross-Reference Search

   

KT819V-1 detailed specifications

 9.1. Size:1253K  russia
 kt819a-b-v-g-am-bm-vm-gm 2t819a-b-v.pdf pdf_icon

KT819V-1

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Detailed specifications: KT819AM , KT819B , KT819B-1 , KT819BM , KT819G , KT819G-1 , KT819GM , KT819V , 2SC945 , KT819VM , KT825D , KT825E , KT825G , KT826A , KT826B , KT826V , KT827A .

Keywords - KT819V-1 transistor specs

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