KT819V-1 Datasheet, Equivalent, Cross Reference Search

   Type Designator: KT819V-1
   SMD Transistor Code: КТ819В-1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -

KT819V-1 Transistor Equivalent Substitute - Cross-Reference Search