KT825E Datasheet. Specs and Replacement

Type Designator: KT825E  📄📄 

SMD Transistor Code: КТ825Е

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

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KT825E datasheet

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KT825E

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Detailed specifications: KT819BM, KT819G, KT819G-1, KT819GM, KT819V, KT819V-1, KT819VM, KT825D, S9013, KT825G, KT826A, KT826B, KT826V, KT827A, KT827B, KT827V, KT828A

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