KT835B Datasheet and Replacement

   Type Designator: KT835B
   SMD Transistor Code: КТ835Б
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 6.2 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 7.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
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