KT835B Specs and Replacement
Type Designator: KT835B
SMD Transistor Code: КТ835Б
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 6.2 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
KT835B Substitution
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KT835B datasheet
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Detailed specifications: KT830, KT830A, KT830G, KT830V, KT834A, KT834B, KT834V, KT835A, 431, KT837A, KT837B, KT837C, KT837D, KT837E, KT837F, KT837G, KT837H
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