KT856B-1 Specs and Replacement

Type Designator: KT856B-1

SMD Transistor Code: КТ856Б-1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 100 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

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KT856B-1 datasheet

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Detailed specifications: KT854A, KT854B, KT855A, KT855B, KT855V, KT856A, KT856A-1, KT856B, TIP127, KT857A, KT858A, KT859A, KT863A, KT864A, KT865A, KT868A, KT868B

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