All Transistors. KT912A Datasheet

 

KT912A Datasheet and Replacement


   Type Designator: KT912A
   SMD Transistor Code: КТ912А
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
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KT912A Datasheet (PDF)

 0.1. Size:706K  russia
 kt912a-b 2t912a-b.pdf pdf_icon

KT912A

 9.1. Size:96K  syntez microelectronics
 kt9128ac.pdf pdf_icon

KT912A

Syntez MicroelectronicsKT9128ACSILICON BIPOLAR NPN POWER TRANSISTOR200 W, in the 30 175 MHz Frequency Range ________________________________________________The silicon bipolar n-p-n transistor is designed forwideband largesignal output and driver amplifierstages in the 30 to 175 MHz frequency range.Features (At 175 MHz): Output Power: 200 W Power Gain: 7.5 dB Min

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N3741

Keywords - KT912A transistor datasheet

 KT912A cross reference
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