KT912A Specs and Replacement
Type Designator: KT912A
SMD Transistor Code: КТ912А
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
KT912A Substitution
- BJT ⓘ Cross-Reference Search
KT912A datasheet
Syntez Microelectronics KT9128AC SILICON BIPOLAR NPN POWER TRANSISTOR 200 W, in the 30 175 MHz Frequency Range ________________________________________________ The silicon bipolar n-p-n transistor is designed for wideband large signal output and driver amplifier stages in the 30 to 175 MHz frequency range. Features (At 175 MHz) Output Power 200 W Power Gain 7.5 dB Min ... See More ⇒
Detailed specifications: KT9121G, KT9121V, KT9124A, KT9124B, KT9126A, KT9127A, KT9127B, KT9129A, A940, KT912B, KT9131A, KT9133A, KT9135A-2, KT9137A, KT9139A, KT9139B, KT913A
Keywords - KT912A pdf specs
KT912A cross reference
KT912A equivalent finder
KT912A pdf lookup
KT912A substitution
KT912A replacement
