KT914A Specs and Replacement

Type Designator: KT914A

SMD Transistor Code: КТ914А

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 7 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

 KT914A Substitution

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KT914A datasheet

 ..1. Size:643K  russia

 kt914a 2t914a.pdf pdf_icon

KT914A

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 9.1. Size:82K  syntez microelectronics

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KT914A

Syntez Microelectronics KT9147AC SILICON BIPOLAR NPN POWER TRANSISTOR 200 W, in the 30 500 MHz Frequency Range 23,5 The silicon bipolar n-p-n transistor is designed for wideband large signal output and driver amplifier 11,4 max 11,4 max stages in the 30 to 500 MHz frequency range. Features (At 400 MHz) Output Power 160 W Power Gain 6 dB Min 38 max Efficiency 50% ... See More ⇒

Detailed specifications: KT913V, KT9140A, KT9141A, KT9141A1, KT9144A9, KT9145A9, KT9149A, KT9149B, 2SC945, KT916A, KT916B, KT918A, KT918B, KT919A, KT919B, KT919G, KT919V

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