KTA1273 Datasheet and Replacement

SEMICONDUCTOR KTA1273TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION.B DFEATURES Complementary to KTC3205.DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHARACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBO -30 VH 0.55 MAXCollector-Base Voltage FF_J 14.00 + 0.50K 0

KTA1273 TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE High Current Low Voltage2. COLLECTOR Complementary to KTC3205 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A PC Collector Power Dissipation 5

KTA1273 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features Complementary to KTC3205. 7.800 8.200MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.6000.800Symbol Parameter Value Units0.350VCBO Collector-Base Voltage -30 V0.55013.800VCEO Collector-Emitter Voltage -30 V 14.200VEBO Emitter-Base Voltage -5 V IC Co

KTA1273T(BR3CG1273T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features KTC3205T(BR3DG3205T) Complementary pair with KTC3205T(BR3DG3205T). / Applications High current applications. / Equivalent Circuit

MCCKTA1270-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311KTA1270-YPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS PNPCompliant. See ordering information)Plastic-Encapsulate Epoxy meets

SEMICONDUCTOR KTA1275TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORCOLOR TV VERT. DEFELECTION OUTPUT APPLICATION.COLOR TV CLASS B SOUND OUTPUT APPLICATION.B DFEATURESHigh Voltage : VCEO=-160V.DIM MILLIMETERSPLarge Continuous Collector Current Capability.DEPTH:0.2A 7.20 MAXComplementary to KTC3228. B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G 1.70

SEMICONDUCTOR KTA1277TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.DC-DC CONVERTER.B DLOW POWER SWITCHING REGULATOR.FEATURES DIM MILLIMETERSP High Breakdown Voltage.DEPTH:0.2A 7.20 MAX Low Collector Saturation Voltage. B 5.20 MAXCC 0.60 MAXS High Speed Switching.D 2.50 MAXQE 1.15 MAXKF 1.27G 1.70 MAXH 0.55 MAXFF_J 14.0

SEMICONDUCTOR KTA1272TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATURES BHigh hFE : hFE=100320.Complementary to KTC3204.DIM MILLIMETERSOA 3.20 MAXHM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27MAXIMUM RATING (Ta=25)F 2.30C_+G 14.00 0.50CHARACTERISTIC SYMBOL RATING UNITH 0.60 MAXJ 1.05VCBO -35 VCollector-Base

SEMICONDUCTOR KTA1279TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION.TELEPHONE APPLICATION.B CMAXIMUM RATING (Ta=25 )N DIM MILLIMETERSCHARACTERISTIC SYMBOL RATING UNITA 4.70 MAXEKB 4.80 MAXGVCBO -300 VCollector-Base VoltageC 3.70 MAXDD 0.45VCEO -300 VCollector-Emitter Voltage E 1.00F 1.27G 0.85VEBO -5.0 VEmitter-Base Voltage

SEMICONDUCTOR KTA1274TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. B DFEATURES Complementary to KTC3227.DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHARACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBO -80 VCollector-Base Voltage H 0.55 MAXFF_J 14.00 + 0.50

SEMICONDUCTOR KTA1271ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATURES B CHigh hFE : hFE=100320.Complementary to KTC3203A.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25)C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27G 0.85VCBO -35 VCollector-Base VoltageH 0.45_HJ 14.00 + 0

SEMICONDUCTOR KTA1270TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. FEATURES Excellent hFE Linearity: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA.Complementary to KTC3202.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -35 VCollector-Base VoltageVCEO -30 VCollector-Emitter VoltageVEBOEmitter-Base Voltag

SEMICONDUCTOR KTA1271TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATURES High hFE : hFE=100 320. Complementary to KTC3203.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85VCBO -35 VCollector-Base Voltage H 0.45_HJ 14.00 + 0.50K 0.

KTA1270(PNP)TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Geenral purpose application switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)IC Collector Curren

DIP Type TransistorsPNP TransistorsKTA1270Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Complementary to KTC3202.0.60 Max0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter