KTA1273 Todos los transistores

SEMICONDUCTOR KTA1273 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B D FEATURES Complementary to KTC3205. DIM MILLIMETERS P DEPTH 0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO -30 V H 0.55 MAX Collector-Base Voltage FF _ J 14.00 + 0.50 K 0

KTA1273 TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE High Current Low Voltage 2. COLLECTOR Complementary to KTC3205 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A PC Collector Power Dissipation 5

KTA1273 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 1 5.100 Features Complementary to KTC3205. 7.800 8.200 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600 0.800 Symbol Parameter Value Units 0.350 VCBO Collector-Base Voltage -30 V 0.550 13.800 VCEO Collector-Emitter Voltage -30 V 14.200 VEBO Emitter-Base Voltage -5 V IC Co

MCC KTA1270-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 KTA1270-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS PNP Compliant. See ordering information) Plastic-Encapsulate Epoxy meets

SEMICONDUCTOR KTA1275 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR COLOR TV VERT. DEFELECTION OUTPUT APPLICATION. COLOR TV CLASS B SOUND OUTPUT APPLICATION. B D FEATURES High Voltage VCEO=-160V. DIM MILLIMETERS P Large Continuous Collector Current Capability. DEPTH 0.2 A 7.20 MAX Complementary to KTC3228. B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70

SEMICONDUCTOR KTA1277 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. DC-DC CONVERTER. B D LOW POWER SWITCHING REGULATOR. FEATURES DIM MILLIMETERS P High Breakdown Voltage. DEPTH 0.2 A 7.20 MAX Low Collector Saturation Voltage. B 5.20 MAX C C 0.60 MAX S High Speed Switching. D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX H 0.55 MAX FF _ J 14.0

SEMICONDUCTOR KTA1272 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B High hFE hFE=100 320. Complementary to KTC3204. DIM MILLIMETERS O A 3.20 MAX H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 MAXIMUM RATING (Ta=25 ) F 2.30 C _ + G 14.00 0.50 CHARACTERISTIC SYMBOL RATING UNIT H 0.60 MAX J 1.05 VCBO -35 V Collector-Base

SEMICONDUCTOR KTA1279 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. B C MAXIMUM RATING (Ta=25 ) N DIM MILLIMETERS CHARACTERISTIC SYMBOL RATING UNIT A 4.70 MAX E K B 4.80 MAX G VCBO -300 V Collector-Base Voltage C 3.70 MAX D D 0.45 VCEO -300 V Collector-Emitter Voltage E 1.00 F 1.27 G 0.85 VEBO -5.0 V Emitter-Base Voltage

SEMICONDUCTOR KTA1274 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. B D FEATURES Complementary to KTC3227. DIM MILLIMETERS P DEPTH 0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO -80 V Collector-Base Voltage H 0.55 MAX FF _ J 14.00 + 0.50

SEMICONDUCTOR KTA1271A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C High hFE hFE=100 320. Complementary to KTC3203A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25 ) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 G 0.85 VCBO -35 V Collector-Base Voltage H 0.45 _ H J 14.00 + 0

SEMICONDUCTOR KTA1270 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. Complementary to KTC3202. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO -35 V Collector-Base Voltage VCEO -30 V Collector-Emitter Voltage VEBO Emitter-Base Voltag

SEMICONDUCTOR KTA1271 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURES High hFE hFE=100 320. Complementary to KTC3203. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO -35 V Collector-Base Voltage H 0.45 _ H J 14.00 + 0.50 K 0.

KTA1270(PNP) TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Geenral purpose application switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Curren

DIP Type Transistors PNP Transistors KTA1270 Unit mm TO-92 4.8 0.3 3.8 0.3 Features Excellent hFE Linearity Complementary to KTC3202. 0.60 Max 0.45 0.1 0.5 2 1 3 1.Emitter 2.Collector 1.27 2.54 3.Base Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter