All Transistors. KTB1367 Datasheet

 

KTB1367 Datasheet, Equivalent, Cross Reference Search


   Type Designator: KTB1367
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220F

 KTB1367 Transistor Equivalent Substitute - Cross-Reference Search

   

KTB1367 Datasheet (PDF)

 ..1. Size:445K  kec
ktb1367.pdf

KTB1367
KTB1367

SEMICONDUCTOR KTB1367TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORGENERAL PURPOSE APPLICATION. ACFEATURESDIM MILLIMETERSSLow Collector-Emitter Saturation Voltage_A 10.0 + 0.3_+B 15.0 0.3E: VCE(sat)=-2.0V(Max.).C _2.70 0.3+D 0.76+0.09/-0.05Complementary to KTD2059._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L

 ..2. Size:214K  inchange semiconductor
ktb1367.pdf

KTB1367
KTB1367

isc Silicon PNP Power Transistor KTB1367DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = -2.0V(Max)@ (I = -4A, I = -0.4A)CE(sat) C BComplement to Type KTD2059Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

 8.1. Size:448K  kec
ktb1368.pdf

KTB1367
KTB1367

SEMICONDUCTOR KTB1368TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURES DIM MILLIMETERSSGood Linearity of hFE._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTD2060.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (Ta=25 )RK _3.7 0.2

 8.2. Size:446K  kec
ktb1366.pdf

KTB1367
KTB1367

SEMICONDUCTOR KTB1366TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURESDIM MILLIMETERSSLow Collector Saturation Voltage_A 10.0 + 0.3_+B 15.0 0.3E: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A.C _2.70 0.3+D 0.76+0.09/-0.05Collector Power Dissipation_E 3.2 0.2+: PC=25W (Tc=25 ) _F 3.0 0.3+_12.0 0.3G +Comple

 8.3. Size:439K  kec
ktb1369.pdf

KTB1367
KTB1367

SEMICONDUCTOR KTB1369TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATIONACDRIVER STAGE APPLICATIONDIM MILLIMETERSSCOROR TV CLASS B SOUND OUTPUT APPLICATION_A 10.0 0.3+_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05FEATURES_E 3.2 0.2+High Breakdown Voltage : VCEO=-180V(Min.) _F 3.0 0.3+

 8.4. Size:214K  inchange semiconductor
ktb1366.pdf

KTB1367
KTB1367

isc Silicon PNP Power Transistor KTB1366DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BComplement to Type KTD2058Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATI

 8.5. Size:215K  inchange semiconductor
ktb1369.pdf

KTB1367
KTB1367

isc Silicon PNP Power Transistor KTB1369DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -180V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -0.5A, I = -50mA)CE(sat) C BComplement to Type KTD2061Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh Voltage applicationTV, monitor verti

Datasheet: KTA2015 , KTA2017 , KTA2400 , KTA562TM , KTA940 , KTA968 , KTA968A , KTB1366 , BD139 , KTB1368 , KTB1369 , KTB1370 , KTB1423 , KTB1424 , KTB2955 , KTB595 , KTB688 .

 

 
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