KTB1424 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTB1424
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 3000
Noise Figure, dB: -
Package: TO220F
KTB1424 Transistor Equivalent Substitute - Cross-Reference Search
KTB1424 Datasheet (PDF)
ktb1424.pdf
SEMICONDUCTOR KTB1424TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE DARLINGTON TRANSISTOR.ACFEATURES DIM MILLIMETERSSHigh DC Current Gain : hFE=3000(Min.) (VCE=-2V, IC=-1A)_A 10.0 0.3+_+B 15.0 0.3Complementary to KTD2424. EC _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_13.6 0.5J +L
ktb1423.pdf
SEMICONDUCTOR KTB1423TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATIONS.HAMMER DRIVER, PULSE MOTOR DRIVERACAPPLICATIONS.DIM MILLIMETERSS_A 10.0 0.3+_+B 15.0 0.3FEATURES EC _2.70 0.3+DHigh DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. 0.76+0.09/-0.05_E 3.2 0.2+High Collector Breakdown Voltage : VCEO=-120V (Min.)_F 3.0
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
