KTB688 Specs and Replacement
Type Designator: KTB688
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 55
Package: TO3P
KTB688 Substitution
- BJT ⓘ Cross-Reference Search
KTB688 datasheet
SEMICONDUCTOR KTB688 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Complementary to KTD718. Recommended for 45 50W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. A 15.9 MAX B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 MAXIMUM RATING (Ta=25 ) G 3.3 MAX d H 9.0 CHARACTERISTIC SYMBOL RATI... See More ⇒
isc Silicon PNP Power Transistor KTB688 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type KTD718 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applicat... See More ⇒
SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 45 50W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to KTD718B. _ A + 15.60 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 0.20 + _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50 + 0.20 E _... See More ⇒
Detailed specifications: KTB1367 , KTB1368 , KTB1369 , KTB1370 , KTB1423 , KTB1424 , KTB2955 , KTB595 , C945 , KTB778 , KTB817 , KTB988 , KTB989 , KTC1001 , KTC1003 , KTC1006 , KTC1008 .
History: 2SA922-1
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