KTB988 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTB988
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO220
KTB988 Transistor Equivalent Substitute - Cross-Reference Search
KTB988 Datasheet (PDF)
ktb985.pdf
SEMICONDUCTOR KTB985TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORVOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENTB DFEATURES Adoption of MBIT processes.DIM MILLIMETERSP Low collector-to-emitter saturation voltage.DEPTH:0.2A 7.20 MAX Fast switching speed. B 5.20 MAXCC 0.60 MAXS Large current capacity and wide ASO.D 2.50 MAXQE 1.15 MAXK
Datasheet: KTB1370 , KTB1423 , KTB1424 , KTB2955 , KTB595 , KTB688 , KTB778 , KTB817 , D882 , KTB989 , KTC1001 , KTC1003 , KTC1006 , KTC1008 , KTC1020 , KTC1026 , KTC1027 .
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