KTB989 Specs and Replacement
Type Designator: KTB989
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
KTB989 Substitution
- BJT ⓘ Cross-Reference Search
KTB989 datasheet
SEMICONDUCTOR KTB985 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT B D FEATURES Adoption of MBIT processes. DIM MILLIMETERS P Low collector-to-emitter saturation voltage. DEPTH 0.2 A 7.20 MAX Fast switching speed. B 5.20 MAX C C 0.60 MAX S Large current capacity and wide ASO. D 2.50 MAX Q E 1.15 MAX K... See More ⇒
Detailed specifications: KTB1423 , KTB1424 , KTB2955 , KTB595 , KTB688 , KTB778 , KTB817 , KTB988 , BC548 , KTC1001 , KTC1003 , KTC1006 , KTC1008 , KTC1020 , KTC1026 , KTC1027 , KTC1170 .
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