All Transistors. KTC3112 Datasheet

 

KTC3112 Datasheet, Equivalent, Cross Reference Search

Type Designator: KTC3112

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 600

Noise Figure, dB: -

KTC3112 Transistor Equivalent Substitute - Cross-Reference Search

 

KTC3112 Datasheet (PDF)

1.1. ktc3112.pdf Size:75K _kec

KTC3112
KTC3112

SEMICONDUCTOR KTC3112 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURE High DC Current Gain : hFE=600 3600. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO Collector-Base Voltage 50 V H 0.45 _ H J 14.00 +

4.1. ktc3113.pdf Size:75K _kec

KTC3112
KTC3112

SEMICONDUCTOR KTC3113 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURE High DC Current Gain : hFE=600 3600. Small Package. DIM MILLIMETERS O A 3.20 MAX H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 MAXIMUM RATING (Ta=25 ) F 2.30 C _ + G 14.00 0.50 CHARACTERISTIC SYMBOL RATING UNIT H 0.60 MAX J 1.05 VCBO

4.2. ktc3114.pdf Size:395K _kec

KTC3112
KTC3112

SEMICONDUCTOR KTC3114 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B SWITCHING APPLICATION. D C E FEATURE F High DC Current Gain : hFE=600 3600. G H DIM MILLIMETERS J A 8.3 MAX MAXIMUM RATING (Ta=25 ) K B 5.8 L C 0.7 CHARACTERISTIC SYMBOL RATING UNIT _ + D Φ3.2 0.1 E 3.5 VCBO Collector-Base Voltage 50 V _ + F 11.0 0.3 G 2.9 MAX

Datasheet: 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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